产品

HS8443E

Product Features

•  Two T/R (RX) ports and 14 outputs

•  Industry-leading PAE for 3G/4G

•  Optimized for APT DCDC operation

•  Fully programmable Mobile Industry

•  Processor Interface (MIPI) control

•  MIPI programmable bias modes optimize best efficiency / linearity trade-off for 3G and 4G; minimizes DG09 for 3G.

•  Small Package:

   - 4.0 mm x 6.8 mm x 0.95 mm, Max

   - LGA 42 pad configuration

•  3G / 4G Modulation scheme includes:

   - WCDMA Voice Release 99

   - HSDPA categories

   - HSUPA

   - HSPA+

   - TD-SCDMA

   - LTE 1.4, 3, 5, 10, 15, 20 MHz Channel BW

   - TDD-LTE

•  Multiband 3G / LTE handsets

•  WCDMA Bands I, II, III, IV, V, VIII, IX

•  TD-SCDMA Bands 34, 39

•  FDD LTE Bands

1, 2, 3, 4, 5, 7, 8, 9, 12, 13, 17, 20, 28, 30

•  TDD LTE Bands 38, 39, 40, 41


 

Functional Diagram

Product Description

HS8443E is a hybrid multimode multiband (MMMB) Power Amplifier Module (PAM) that supports 3G / 4G handsets and operates efficiently in WCDMA, TD-SCDMA, and LTE modes. The module is fully programmable through a Mobile Industry Processor Interface (MIPI).

The PAM consists of a WCDMA / LTE block for low, high, and mid-bands, and a Multi-Function Control (MFC) block, RF input/output ports internally matched to 50 ohm to reduce the number of external components. A CMOS integrated circuit uses standard MIPI controls to provide the internal MFC interface and operation. Extremely low leakage current maximizes handset standby time. The devices packaged in a small LGA package (4.0 mm x 6.8 mm x 0.95 mm).

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